MOS FLAT-BAND CAPACITANCE METHOD AT LOW-TEMPERATURES

被引：17

作者：

HUANG, CL ^{[1
]}

GILDENBLAT, GS ^{[1
]}

机构：

[1] PENN STATE UNIV,CTR ELECTR MAT & PROC,UNIVERSITY PK,PA 16802

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 08期

关键词：

D O I：

10.1109/16.30956

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1434 / 1439

页数：6

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[8] FREEZE-OUT CHARACTERISTICS OF MOS VARACTOR [J].

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[10] DEPENDENCE OF THE WORK-FUNCTION DIFFERENCE BETWEEN THE POLYSILICON GATE AND SILICON SUBSTRATE ON THE DOPING LEVEL IN POLYSILICON [J].

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