QUENCHED-IN BULK DEFECTS AND INTERFACE STATES IN MOS STRUCTURES MEASURED BY TRANSIENT CAPACITANCE SPECTROSCOPY

被引：18

作者：

WANG, KL

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1978年 / 125卷 / 10期

关键词：

D O I：

10.1149/1.2131268

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

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页码：1664 / 1667

页数：4

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