FREE CHARGE PROPAGATION IN A RESISTIVE-GATE MOS TRANSMISSION-LINE

被引:3
作者
BARSAN, RM
机构
关键词
D O I
10.1109/T-ED.1978.19234
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1109 / 1119
页数:11
相关论文
共 13 条
[1]  
[Anonymous], CHARGE TRANSFER DEVI
[3]  
BARSAN RM, 1976, P I ELECTR ENG, V123, P505, DOI 10.1049/piee.1976.0115
[4]  
BARSAN RM, UNPUBLISHED
[5]   CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD [J].
CAUGHEY, DM ;
THOMAS, RE .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12) :2192-+
[6]   NUMERICAL-METHODS FOR CHARGE-TRANSFER ANALYSIS OF CHARGE-COUPLED-DEVICES [J].
CHAN, CH ;
CHAMBERLAIN, SG .
SOLID-STATE ELECTRONICS, 1974, 17 (05) :491-499
[7]   THE MOBILITY AND LIFE OF INJECTED HOLES AND ELECTRONS IN GERMANIUM [J].
HAYNES, JR ;
SHOCKLEY, W .
PHYSICAL REVIEW, 1951, 81 (05) :835-843
[8]   SURFACE-CHARGE TRANSPORT WITH AN MOS-TRANSMISSION-LINE [J].
HOFFMANN, K .
SOLID-STATE ELECTRONICS, 1977, 20 (03) :177-181
[9]  
Hoffmann K., 1976, Siemens Forschungs- und Entwicklungsberichte, V5, P257
[10]   BEHAVIOR OF CONTINUOUSLY CHARGE-COUPLED RANDOM-ACCESS MEMORY (C3RAM) [J].
HOFFMANN, K .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1976, 11 (05) :591-596