DELOCALIZED EXCITON AND ELECTRON CONDUCTION VIA THE X-VALLEY IN GAAS/ALAS QUANTUM-WELLS

被引：8

作者：

DUTTA, M ^{[1
]}

SMITH, DD ^{[1
]}

NEWMAN, PG ^{[1
]}

LIU, XC ^{[1
]}

PETROU, A ^{[1
]}

机构：

[1] SUNY BUFFALO, DEPT PHYS & ASTRON, BUFFALO, NY 14260 USA

来源：

PHYSICAL REVIEW B | 1990年 / 42卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.42.1474

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The results of magnetoreflection, photoluminescence, and photoluminescence excitation experiments are reported in GaAs-AlAs multiple quantum wells of different well widths, demonstrating the influence of the X band in the AlAs on the electron levels in GaAs. Evidence is presented for the existence of an exciton formed from a delocalized electron, and for the conduction of electrons from narrow wells to wide wells via the X band of AlAs. © 1990 The American Physical Society.

引用

页码：1474 / 1477

页数：4