NEW SURFACE-STRUCTURE ANALYSIS OF AG-SI PHASE BY QUANTITATIVE AUGER-ELECTRON SPECTROSCOPY METHOD

被引:15
作者
TOKUTAKA, H
NISHIMORI, K
NOMURA, S
TANAKA, A
TAKASHIMA, K
机构
关键词
D O I
10.1016/0039-6028(82)90662-8
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
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页码:79 / 90
页数:12
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共 18 条
[1]   SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].
BARDEEN, J .
PHYSICAL REVIEW, 1947, 71 (10) :717-727
[2]  
BOLTAKS BI, 1961, SOVIET PHYS SOLID ST, V2, P303
[4]  
GRYZINSKI M, 1965, PHYS REV A, V138, P336
[5]   DEPOSITION OF AG ON SI(100) SURFACES AS STUDIED BY LEED-AES [J].
HANAWA, T ;
OURA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (03) :519-520
[6]   METALLIC STATE OF SI IN SI-NOBLE-METAL VAPOR-QUENCHED ALLOYS STUDIED BY AUGER-ELECTRON SPECTROSCOPY [J].
HIRAKI, A ;
SHIMIZU, A ;
IWAMI, M ;
NARUSAWA, T ;
KOMIYA, S .
APPLIED PHYSICS LETTERS, 1975, 26 (02) :57-60
[7]   MANY-BODY EFFECTS AT METAL-SEMICONDUCTOR JUNCTIONS .2. SELF ENERGY AND BAND-STRUCTURE DISTORTION [J].
INKSON, JC .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (08) :1350-1362
[8]   COHESIVE ENERGY OF 2-DIMENSIONAL SI(111)-3 X 1 AG AND SI(111)SQUARE ROOT 3-R(30-DEGREES)AG PHASES OF SILVER (DEPOSIT)-SILICON(111) (SUBSTRATE) SYSTEM [J].
LELAY, G ;
MANNEVILLE, M ;
KERN, R .
SURFACE SCIENCE, 1978, 72 (02) :405-422
[9]   DIFFUSE INTERFACE IN SI (SUBSTRATE)-AU (EVAPORATED FILM) SYSTEM [J].
NARUSAWA, T ;
KOMIYA, S ;
HIRAKI, A .
APPLIED PHYSICS LETTERS, 1973, 22 (08) :389-390
[10]   COMPARISON OF ESCAPE DEPTHS BETWEEN AUGER-ELECTRON AND DISAPPEARANCE POTENTIAL SPECTROSCOPY ELECTRON [J].
NISHIMORI, K ;
TOKUTAKA, H ;
TAKASHIMA, K .
SURFACE SCIENCE, 1980, 100 (03) :665-677