MAGNETORESISTANCE OF N-GAAS AT FILAMENTARY CURRENT FLOW

被引：4

作者：

PROSHIN, SA ^{[1
]}

GOLUBEV, VG ^{[1
]}

WURFL, S ^{[1
]}

SPANGLER, J ^{[1
]}

SCHILZ, A ^{[1
]}

PRETTL, W ^{[1
]}

机构：

[1] UNIV REGENSBURG, INST ANGEW PHYS, W-8400 REGENSBURG, GERMANY

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 07期

关键词：

D O I：

10.1088/0268-1242/8/7/018

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A large number of sharp structures are observed in the 4.2 K magnetoresistance of n-GaAs biased above impurity breakdown in a regime where current flow is filamentary. Most of the structures cannot be attributed to spectral properties of the semiconductor such as impact excitation of shallow donors or the magnetoimpurity effect. Experimental results give evidence that these structures are caused by a redistribution of the filamentary current flow when one filament border is swept across an imperfection in the material.

引用

页码：1298 / 1302

页数：5

共 24 条

[1]

ABE Y, 1989, APPL PHYS A, V48

[2]

Altshuler B. L, 1991, MESOSCOPIC PHENOMENA

[3] CHAOTIC MOTIONS IN THE ELECTRICAL AVALANCHE BREAKDOWN CAUSED BY WEAK PHOTO-EXCITATION IN N-GAAS [J].

AOKI, K ;

KOBAYASHI, T ;

YAMAMOTO, K .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1982, 51 (08) :2373-2374

[4] FLUCTUATIONS LOCATED AT CURRENT FILAMENT BOUNDARIES IN N-GAAS [J].

BRANDL, A ;

VOLCKER, M ;

PRETTL, W .

SOLID STATE COMMUNICATIONS, 1989, 72 (09) :847-850

[5] OSCILLATIONS AND CHAOTIC CURRENT FLUCTUATIONS IN N-GAAS [J].

BRANDL, A ;

GEISEL, T ;

PRETTL, W .

EUROPHYSICS LETTERS, 1987, 3 (04) :401-406

[6] HALL VOLTAGE COLLAPSE AT FILAMENTARY CURRENT FLOW CAUSING CHAOTIC FLUCTUATIONS IN N-GAAS [J].

BRANDL, A ;

KRONINGER, W ;

PRETTL, W ;

OBERMAIR, G .

PHYSICAL REVIEW LETTERS, 1990, 64 (02) :212-215

[7] RECONSTRUCTION OF THE SPATIAL STRUCTURE OF CURRENT FILAMENTS IN N-GAAS IN A MAGNETIC-FIELD [J].

BRANDL, A ;

VOLCKER, M ;

PRETTL, W .

APPLIED PHYSICS LETTERS, 1989, 55 (03) :238-240

[8] CHAOTIC FLUCTUATIONS AND FORMATION OF A CURRENT FILAMENT IN N-TYPE GAAS [J].

BRANDL, A ;

PRETTL, W .

PHYSICAL REVIEW LETTERS, 1991, 66 (23) :3044-3047

[9] REVIEW OF THE MAGNETO-IMPURITY EFFECT IN SEMICONDUCTORS [J].

EAVES, L ;

PORTAL, JC .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (14) :2809-2828

[10]

GANTMAKHER VN, 1991, LANDAU LEVEL SPECTRO

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