ASYMMETRIC GAIN INDUCED BY LONGITUDINAL SPATIAL CARRIER BURNING IN SEMICONDUCTOR-LASERS

被引：1

作者：

HUANG, YZ

机构：

[1] Institute of Semiconductors, Chinese Academy of Sciences, Beijing, PO Box 912

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 12期

关键词：

Lasers and laser applications; Semiconductor lasers;

D O I：

10.1049/el:19900511

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nonlinear gain caused by dielectric corrugation resulting from the cavity standing wave of a lasing mode in semiconductor lasers is investigated using the perturbation approach. The results show that the nonlinear gain spectrum is asymmetric when the linewidth enhancement factor a # 0, and the possibility of single mode operation is greater at a = 0. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：783 / 784

页数：2

共 7 条

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