COMPARISON OF THEORETICAL AND EXPERIMENTAL VALUES OF CAPACITANCE OF DIFFUSED JUNCTIONS

被引：10

作者：

VANOVERSTRAETEN, R

NUYTS, W

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1972年 / 43卷 / 10期

关键词：

D O I：

10.1063/1.1660872

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：4040 / +

页数：1

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[1] FULLER C, 1959, J APPL PHYS, V27, P544
[2] SELF-CONSISTENT ITERATIVE SCHEME FOR 1-DIMENSIONAL STEADY STATE TRANSISTOR CALCULATIONS
GUMMEL, HK
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (10) : 455 - &
[3] EINKRISTALLE UND PN-SCHICHTKRISTALLE AUS SILIZIUM
KLEINKNECHT, H
SEILER, K
[J]. ZEITSCHRIFT FUR PHYSIK, 1954, 139 (05): : 599 - 618
[4] POTENTIAL DISTRIBUTION AND CAPACITANCE OF A GRADED P-N JUNCTION
MORGAN, SP
SMITS, FM
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (06): : 1573 - 1602
[5] NUMERICAL CALCULATIONS OF CAPACITANCE OF LINEARLY GRADED SI P-N JUNCTIONS
NUYTS, W
VANOVERS.RJ
[J]. ELECTRONICS LETTERS, 1969, 5 (03) : 54 - &
[6] ANALYTICAL EXPRESSIONS FOR ELECTRIC FIELD AND FOR CAPACITANCES OF SYMMETRICAL AND ASYMMETRICAL ABRUPT P-N JUNCTIONS
NUYTS, W
VANOVERS.R
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (12) : 5109 - &
[7] NUYTS W, UNPUBLISHED
[8] EFFECTS OF ELECTRONS AND HOLES ON TRANSITION LAYER CHARACTERISTICS OF LINEARLY GRADED P-N JUNCTIONS
SAH, CT
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1961, 49 (03): : 603 - &
[9] FREQUENCY DEPENDENCE OF REVERSE-BIASED CAPACITANCE OF GOLD-DOPED SILICON P+N STEP JUNCTIONS
SAH, CT
REDDI, VGK
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) : 345 - +
[10] THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS
SHOCKLEY, W
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03): : 435 - 489