CHEMICAL-REACTION AT THE IN ON GAAS (110) INTERFACE - A SYNCHROTRON RADIATION PHOTOEMISSION-STUDY

被引：6

作者：

CHIN, KK ^{[1
]}

MIYANO, K ^{[1
]}

CAO, R ^{[1
]}

KENDELEWICZ, T ^{[1
]}

YEH, J ^{[1
]}

LINDAU, I ^{[1
]}

SPICER, WE ^{[1
]}

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.583732

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1080 / 1082

页数：3

共 8 条

[1] SEGREGATION OF AS ON GAAS(110) SURFACES OBSERVED IMMEDIATELY AFTER CLEAVAGE
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CLEMENS, HJ
MONCH, W
[J]. PHYSICA B & C, 1983, 117 (MAR): : 801 - 803
[2] SSRL ULTRAHIGH-VACUUM GRAZING INCIDENCE MONOCHROMATOR - DESIGN CONSIDERATIONS AND OPERATING EXPERIENCE
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[J]. NUCLEAR INSTRUMENTS & METHODS, 1978, 152 (01): : 73 - 79
[3] CHEMICAL-REACTION AT THE IN ON GAAS(110) INTERFACE
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NEWMAN, N
LINDAU, I
SPICER, WE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04): : 955 - 958
[4] ARSENIC PRECIPITATION AT DISLOCATIONS IN GAAS SUBSTRATE MATERIAL
CULLIS, AG
AUGUSTUS, PD
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[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2556 - 2560
[5] THE ROLE OF COMPOUND FORMATION AND HETEROEPITAXY IN INDIUM-BASED OHMIC CONTACTS TO GAAS
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[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) : 1888 - 1891
[6] CHEMICAL BONDING, ADATOM-ADATOM INTERACTION, AND REPLACEMENT REACTION OF COLUMN-3 METALS ON GAAS(110)
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LINDAU, I
SU, CY
SPICER, WE
[J]. PHYSICAL REVIEW B, 1983, 28 (12): : 7051 - 7067
[7] OHMIC CONTACTS TO NORMAL-GAAS USING GRADED BAND-GAP LAYERS OF GA1-XINXAS GROWN BY MOLECULAR-BEAM EPITAXY
WOODALL, JM
FREEOUF, JL
PETTIT, GD
JACKSON, TN
KIRCHNER, P
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 626 - 627
[8] ATOMIC SUBSHELL PHOTOIONIZATION CROSS-SECTIONS AND ASYMMETRY PARAMETERS - 1 LESS-THAN-OR-EQUAL-TO Z LESS-THAN-OR-EQUAL-TO 103
YEH, JJ
LINDAU, I
[J]. ATOMIC DATA AND NUCLEAR DATA TABLES, 1985, 32 (01) : 1 - 155

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