ELECTROREFLECTANCE OF IN0.79GA0.21AS0.54P0.46

被引：15

作者：

NISHINO, T

YAMAZOE, Y

HAMAKAWA, Y

机构：

来源：

APPLIED PHYSICS LETTERS | 1978年 / 33卷 / 10期

关键词：

D O I：

10.1063/1.90215

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：861 / 862

页数：2

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[1] THIRD-DERIVATIVE MODULATION SPECTROSCOPY WITH LOW-FIELD ELECTROREFLECTANCE
ASPNES, DE
[J]. SURFACE SCIENCE, 1973, 37 (01) : 418 - 442
[2] INTERBAND MASSES OF HIGHER INTERBAND CRITICAL-POINTS IN GE
ASPNES, DE
[J]. PHYSICAL REVIEW LETTERS, 1973, 31 (04) : 230 - 233
[3] Cardona M., 1969, MODULATION SPECTROSC
[4] LIQUID-PHASE EPITAXIAL IN 1-XGAXP1-ZASZ/GAAS1-YPY QUATERNARY (LPE)-TERNARY (VPE) HETEROJUNCTION LASERS (X-0.70, Z-0.01, Y-0.40 - LAMBDA LESS-THAN 6300 A,77 DEGREES K)
COLEMAN, JJ
HITCHENS, WR
HOLONYAK, N
LUDOWISE, MJ
GROVES, WO
KEUNE, DL
[J]. APPLIED PHYSICS LETTERS, 1974, 25 (12) : 725 - 727
[5] Hamakawa Y, 1976, OPTICAL PROPERTIES S
[6] ROOM-TEMPERATURE CW OPERATION OF GALNASP-INP DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.1 MU-M
HSIEH, JJ
ROSSI, JA
DONNELLY, JP
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (12) : 709 - 711
[7] MEASURED COMPOSITIONS AND LASER-EMISSION WAVELENGTHS OF GAXIN1-XASYP1-Y LPE LAYERS LATTICE-MATCHED TO INP SUBSTRATES
HSIEH, JJ
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (01) : 31 - 37
[8] HURWITZ GE, 1978, APPL PHYS LETT, V32, P487
[9] VELOCITY-FIELD CHARACTERISTICS OF GA1-XINXP1-YASY QUATERNARY ALLOYS
LITTLEJOHN, MA
HAUSER, JR
GLISSON, TH
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (05) : 242 - 244
[10] BANDGAP AND LATTICE-CONSTANT OF GAINASP AS A FUNCTION OF ALLOY COMPOSITION
MOON, RL
ANTYPAS, GA
JAMES, LW
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (03) : 635 - 644