INSITU OBSERVATION OF MOLECULAR-BEAM EPITAXY OF GAAS AND ALGAAS UNDER DEFICIENT AS-4 FLUX BY SCANNING REFLECTION ELECTRON-MICROSCOPY

被引：37

作者：

YAMADA, K

INOUE, N

OSAKA, J

WADA, K

机构：

来源：

关键词：

D O I：

10.1063/1.101829

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：622 / 624

页数：3

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[2] SELF-MASKING SELECTIVE EPITAXY BY MOLECULAR-BEAM METHOD [J].

NAGATA, S ;

TANAKA, T .

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JOYCE, BA ;

DOBSON, PJ .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 34 (03) :179-184

STALL, RA ;

ZILKO, J ;

SWAMINATHAN, V ;

SCHUMAKER, N .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :524-527

[5]

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