BUFFER LAYER EFFECTS ON RESIDUAL-STRESS IN INP ON SI SUBSTRATES

被引：24

作者：

SUGO, M

YAMAGUCHI, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 18期

关键词：

D O I：

10.1063/1.101281

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1754 / 1756

页数：3

共 8 条

[1]

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[3]

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[5] RESIDUAL STRAINS IN HETEROEPITAXIAL III-V SEMICONDUCTOR-FILMS ON SI(100) SUBSTRATES [J].

SUGO, M ;

UCHIDA, N ;

YAMAMOTO, A ;

NISHIOKA, T ;

YAMAGUCHI, M .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (02) :591-595

[6]

UCHIDA N, 1987, 19TH C SOL STAT DEV, P155

[7] LOW THRESHOLD PULSED AND CONTINUOUS LASER OSCILLATION FROM ALGAAS/GAAS DOUBLE HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION ON SI SUBSTRATES [J].

VANDERZIEL, JP ;

DUPUIS, RD ;

LOGAN, RA ;

MIKULYAK, RM ;

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SAVAGE, A .

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[8]

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