RESIDUAL STRAINS IN HETEROEPITAXIAL III-V SEMICONDUCTOR-FILMS ON SI(100) SUBSTRATES

[1] GROWTH OF SINGLE DOMAIN GAAS LAYER ON (100)-ORIENTED SI SUBSTRATE BY MOCVD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (11): : L843 - L845

[2] ENERGY BAND-GAP SHIFT WITH ELASTIC STRAIN IN GAXIN1-XP EPITAXIAL LAYERS ON (001) GAAS SUBSTRATES [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) : 2052 - 2056

[3] PHOTOLUMINESCENCE STUDY OF GAAS GROWN DIRECTLY ON SI SUBSTRATES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (09): : L1468 - L1471

[4] FENG ZC, 1983, J APPL PHYS, V54, P83, DOI 10.1063/1.331690

[5] 14.5-PERCENT CONVERSION EFFICIENCY GAAS SOLAR-CELL FABRICATED ON SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1986, 49 (23) : 1614 - 1616

[6] BIAXIALLY STRESSED EXCITONS IN GAAS/ALGAAS QUANTUM-WELLS GROWN ON SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1987, 51 (16) : 1268 - 1270

[7] STRUCTURE OF VAPOR-DEPOSITED GAXIN1-XAS CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (09) : 3789 - 3794

[8] CROSSHATCH PATTERNS IN GAAS FILMS ON SI SUBSTRATES DUE TO THERMAL STRAIN IN ANNEALING PROCESSES [J]. APPLIED PHYSICS LETTERS, 1987, 51 (23) : 1928 - 1930

[9] CALCULATION OF CRITICAL LAYER THICKNESS VERSUS LATTICE MISMATCH FOR GEXSI1-X/SI STRAINED-LAYER HETEROSTRUCTURES [J]. APPLIED PHYSICS LETTERS, 1985, 47 (03) : 322 - 324

[10] PIEZO-ELECTROREFLECTANCE IN GE GAAS AND SI [J]. PHYSICAL REVIEW, 1968, 172 (03): : 816 - &

[1] GROWTH OF SINGLE DOMAIN GAAS LAYER ON (100)-ORIENTED SI SUBSTRATE BY MOCVD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (11): : L843 - L845

[2] ENERGY BAND-GAP SHIFT WITH ELASTIC STRAIN IN GAXIN1-XP EPITAXIAL LAYERS ON (001) GAAS SUBSTRATES [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) : 2052 - 2056

[3] PHOTOLUMINESCENCE STUDY OF GAAS GROWN DIRECTLY ON SI SUBSTRATES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (09): : L1468 - L1471

[4] FENG ZC, 1983, J APPL PHYS, V54, P83, DOI 10.1063/1.331690

[5] 14.5-PERCENT CONVERSION EFFICIENCY GAAS SOLAR-CELL FABRICATED ON SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1986, 49 (23) : 1614 - 1616

[6] BIAXIALLY STRESSED EXCITONS IN GAAS/ALGAAS QUANTUM-WELLS GROWN ON SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1987, 51 (16) : 1268 - 1270

[7] STRUCTURE OF VAPOR-DEPOSITED GAXIN1-XAS CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (09) : 3789 - 3794

[8] CROSSHATCH PATTERNS IN GAAS FILMS ON SI SUBSTRATES DUE TO THERMAL STRAIN IN ANNEALING PROCESSES [J]. APPLIED PHYSICS LETTERS, 1987, 51 (23) : 1928 - 1930

[9] CALCULATION OF CRITICAL LAYER THICKNESS VERSUS LATTICE MISMATCH FOR GEXSI1-X/SI STRAINED-LAYER HETEROSTRUCTURES [J]. APPLIED PHYSICS LETTERS, 1985, 47 (03) : 322 - 324

[10] PIEZO-ELECTROREFLECTANCE IN GE GAAS AND SI [J]. PHYSICAL REVIEW, 1968, 172 (03): : 816 - &