SAMPLE GEOMETRY-EFFECTS IN RAPID THERMAL ANNEALING

被引：4

作者：

RUGGLES, GA ^{[1
]}

HONG, SN ^{[1
]}

WORTMAN, JJ ^{[1
]}

SORRELL, FY ^{[1
]}

OZTURK, MC ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT MECH & AEROSP ENGN,RALEIGH,NC 27695

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 02期

关键词：

D O I：

10.1116/1.584837

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：122 / 127

页数：6

共 10 条

[1] BASRA V, 1985, P SOC PHOTO-OPT INST, V530, P97, DOI 10.1117/12.946473
[2] GELPEY JC, 1986, MATERIALS RES SOC S, V52, P199
[3] PETTIBONE DW, 1986, MATER RES SOC S P, V52, P209
[4] TEMPERATURE TRANSIENTS IN HEAVILY DOPED AND UNDOPED SILICON USING RAPID THERMAL ANNEALING
SEIDEL, TE
LISCHNER, DJ
PAI, CS
LAU, SS
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) : 1317 - 1321
[5] SHEETS RE, 1986, MATERIALS RES SOC S, V52, P191
[6] RAPS - A RAPID THERMAL PROCESSOR SIMULATION PROGRAM
SHIEH, TJ
CARTER, RL
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (01) : 19 - 24
[7] SORRELL FY, 1989, OCT SPIE S RAP IS PR
[8] SORRELL FY, COMPUTER SIMULATION
[9] SORRELL FY, UNPUB
[10] TEMPERATURE TRANSIENTS OF ION-IMPLANTED SILICON-WAFERS DURING RAPID THERMAL ANNEALING
UOOCHI, Y
SHIOYA, Y
MAEDA, M
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8A) : 2007 - 2010