A MODEL OF INTERFACE DEFECT STATES AT SI/SIO2 AMORPHOUS (NONPERIODIC) INTERFACES

被引：7

作者：

BELTRAN, MR ^{[1
]}

机构：

[1] DEPT PHYS, OXFORD OX1 3NP, ENGLAND

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1993年 / 163卷 / 02期

关键词：

D O I：

10.1016/0022-3093(93)90763-N

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

An extended form of a Hubbard-like Hamiltonian, which includes electron-electron correlations within a spin unrestricted Hartree-Fock approximation, was used in order to study the electronic properties of dangling bond defects near non-periodic interfaces between Si and SiO2. These are modelled by a cluster of Bethe lattices, as used previously for the (111)-Si/SiO2 interface [R.A. Barrio, R.J. Elliott and A.S. Carrico, Phys. Rev. B34 (1986) 879]. This model is applied to simulate the (110)-Si/SiO2 and (100)-Si/SiO2 interfaces.

引用

页码：148 / 161

页数：14

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