EFFECTS OF ELECTRON-ELECTRON CORRELATIONS ON DEFECT AND INTERFACE STATES IN AMORPHOUS SI AND SIO2 SYSTEMS

被引：14

作者：

BARRIO, RA ^{[1
]}

ELLIOTT, RJ ^{[1
]}

CARRICO, AS ^{[1
]}

机构：

[1] UNIV OXFORD,DEPT THEORET PHYS,OXFORD OX1 3NP,ENGLAND

来源：

PHYSICAL REVIEW B | 1986年 / 34卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.34.879

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：879 / 885

页数：7

共 10 条

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