ON 3-DIMENSIONAL TRANSPORT PHENOMENA IN CVD PROCESSES

被引：42

作者：

RHEE, S ^{[1
]}

SZEKELY, J ^{[1
]}

ILEGBUSI, OJ ^{[1
]}

机构：

[1] MIT,DEPT MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 10期

关键词：

D O I：

10.1149/1.2100242

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2552 / 2559

页数：8

共 22 条

[1] BUOYANCY EFFECTS IN THE ENTRANCE REGION OF HORIZONTAL RECTANGULAR CHANNELS [J].

ABOUELLAIL, MMM ;

MORCOS, SM .

JOURNAL OF HEAT TRANSFER-TRANSACTIONS OF THE ASME, 1983, 105 (04) :924-928

[2] NOVEL REACTOR FOR HIGH VOLUME LOW-COST SILICON EPITAXY [J].

BAN, VS .

JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) :97-107

[3]

BAN VS, 1978, J CRYST GROWTH, V31, P284

[4]

BIRD RB, 1960, TRANSPORT PHENOMENA, pCH18

[5] A MATHEMATICAL-MODEL OF THE COUPLED FLUID-MECHANICS AND CHEMICAL-KINETICS IN A CHEMICAL VAPOR-DEPOSITION REACTOR [J].

COLTRIN, ME ;

KEE, RJ ;

MILLER, JA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (02) :425-434

[6] A STAGNANT LAYER MODEL FOR EPITAXIAL GROWTH OF SILICON FROM SILANE IN A HORIZONTAL REACTOR [J].

EVERSTEYN, FC ;

SEVERIN, PJW ;

BREKEL, CHJV ;

PEEK, HL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (07) :925-+

[7] QUANTITATIVE CALCULATION OF GROWTH-RATE OF EPITAXIAL SILICON FROM SICL4 IN A BARREL REACTOR [J].

FUJII, E ;

KOGA, Y ;

HARUNA, K ;

NAKAMURA, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (08) :1106-&

[8] STABILITY OF THERMALLY STRATIFIED PLANE POISEUILLE FLOW [J].

GAGE, KS ;

REID, WH .

JOURNAL OF FLUID MECHANICS, 1968, 33 :21-&

[9]

GILLING LJ, 1982, J ELECTROCHEM SOC, V129, P634

[10] CONVECTIVE INSTABILITY IN THERMAL ENTRANCE REGION OF A HORIZONTAL PARALLEL-PLATE CHANNEL HEATED FROM BELOW [J].

HWANG, GJ ;

CHENG, KC .

JOURNAL OF HEAT TRANSFER-TRANSACTIONS OF THE ASME, 1973, 95 (01) :72-77

← 1 2 3 →