ON-SITE PHOSPHINE PURIFICATION FOR GAS-SOURCE MBE OF INGAALP

被引：3

作者：

HAFICH, MJ ^{[1
]}

WOODS, LM ^{[1
]}

KIM, HS ^{[1
]}

PATRIZI, GA ^{[1
]}

ROBINSON, GY ^{[1
]}

机构：

[1] COLORADO STATE UNIV,DEPT ELECT ENGN,FT COLLINS,CO 80523

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0022-0248(93)90775-R

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A gas filter consisting of 150 cm3 of 3A molecular sieve has been used to purify phosphine immediately prior to use in gas-source molecular beam epitaxy. Use of the purified phosphine has been found to reduce the measured electron trap density in n-InGaP and substantially increase the carrier concentration at a given impurity concentration in n-InGaAlP due to a reduction of oxygen incorporation.

引用

页码：995 / 998

页数：4

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