GAS SOURCE MOLECULAR-BEAM EPITAXY OF INP, GAINAS AND GAINASP

被引：15

作者：

PANISH, MB ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS | 1986年 / 12卷 / 1-4期

关键词：

D O I：

10.1016/0146-3535(86)90004-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

50

引用

收藏

页码：1 / 28

页数：28

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