GROWTH OF INGAP ON GAAS USING GAS-SOURCE MOLECULAR-BEAM EPITAXY

被引：51

作者：

QUIGLEY, JH ^{[1
]}

HAFICH, MJ ^{[1
]}

LEE, HY ^{[1
]}

STAVE, RE ^{[1
]}

ROBINSON, GY ^{[1
]}

机构：

[1] COLORADO STATE UNIV,DEPT ELECT ENGN,FT COLLINS,CO 80523

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 02期

关键词：

D O I：

10.1116/1.584750

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：358 / 360

页数：3

共 12 条

[1] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INGAAIP VISIBLE LASER-DIODES OPERATING AT 0.66-0.68 MU-M AT ROOM TEMPERATURES
ASAHI, H
KAWAMURA, Y
NAGAI, H
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) : 6958 - 6964
[2] GALNP GROWN BY MOLECULAR-BEAM EPITAXY DOPED WITH BE AND SN
BLOOD, P
ROBERTS, JS
STAGG, JP
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) : 3145 - 3149
[3] COX HM, 1986, ELECTRON LETT, V22, P77
[4] ALGAINP DOUBLE HETEROSTRUCTURE VISIBLE-LIGHT LASER-DIODES WITH A GAINP ACTIVE LAYER GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
KOBAYASHI, K
HINO, I
GOMYO, A
KAWATA, S
SUZUKI, T
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (06) : 704 - 711
[5] TWO-DIMENSIONAL ELECTRON-GAS AT GAAS/GA0.52IN0.48P HETEROINTERFACE GROWN BY CHLORIDE VAPOR-PHASE EPITAXY
KODAMA, K
HOSHINO, M
KITAHARA, K
TAKIKAWA, M
OZEKI, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (02): : L127 - L129
[6] MCVITTIE JP, 1972, 2KSG821 STANF U STAN
[7] HETEROJUNCTION BIPOLAR-TRANSISTOR USING A (GA,IN)P EMITTER ON A GAAS BASE, GROWN BY MOLECULAR-BEAM EPITAXY
MONDRY, MJ
KROEMER, H
[J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (04) : 175 - 177
[8] GROWTH OF HIGH-QUALITY INGAALP EPILAYERS BY MOCVD USING METHYL METALORGANICS AND THEIR APPLICATION TO VISIBLE SEMICONDUCTOR-LASERS
OHBA, Y
ISHIKAWA, M
SUGAWARA, H
YAMAMOTO, M
NAKANISI, T
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 374 - 379
[9] PANISH MB, 1986, PROGR CRYSTAL GROWTH, V123, P1
[10] STRUCTURAL AND PHOTO-LUMINESCENT PROPERTIES OF GAXIN1-XP(X ALMOST-EQUAL-TO 0.5) GROWN ON GAAS BY MOLECULAR-BEAM EPITAXY
ROBERTS, JS
SCOTT, GB
GOWERS, JP
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) : 4018 - 4026

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