POLYSILICON OXIDATION SELF-ALIGNED MOS (POSA MOS) - A NEW SELF-ALIGNED DOUBLE SOURCE DRAIN ION-IMPLANTATION TECHNIQUE FOR VLSI

被引：3

作者：

HSIA, S

FATEMI, R

TENG, TC

DEORNELLAS, S

SUN, SC

SKINNER, C

机构：

来源：

ELECTRON DEVICE LETTERS | 1982年 / 3卷 / 02期

关键词：

D O I：

10.1109/EDL.1982.25470

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：40 / 42

页数：3

共 7 条

[1]

Hunter W. R., 1980, International Electron Devices Meeting. Technical Digest, P764

[2] EVIDENCE FOR IMPACT-IONIZED ELECTRON INJECTION IN SUBSTRATE OF N-CHANNEL MOS STRUCTURES [J].

MATSUNAGA, J ;

KOHYAMA, S .

APPLIED PHYSICS LETTERS, 1978, 33 (04) :335-337

[3] 1 MU-M MOSFET VLSI TECHNOLOGY .4. HOT-ELECTRON DESIGN CONSTRAINTS [J].

NING, TH ;

COOK, PW ;

DENNARD, RH ;

OSBURN, CM ;

SCHUSTER, SE ;

YU, HN .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) :268-275

[4] DESIGN AND CHARACTERISTICS OF THE LIGHTLY DOPED DRAIN-SOURCE (LDD) INSULATED GATE FIELD-EFFECT TRANSISTOR [J].

OGURA, S ;

TSANG, PJ ;

WALKER, WW ;

CRITCHLOW, DL ;

SHEPARD, JF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1359-1367

[5] QUADRUPLY SELF-ALIGNED MOS (QSA MOS) - A NEW SHORT-CHANNEL HIGH-SPEED HIGH-DENSITY MOSFET FOR VLSI [J].

OHTA, K ;

YAMADA, K ;

SAITOH, M ;

SHIMIZU, K ;

TARUI, Y .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1352-1358

[6] THERMAL-OXIDATION OF PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON IN WET OXYGEN [J].

SUNAMI, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (06) :892-897

[7]

TAKEDA EE, 1981, SEP P S VLSI TECHN M, P22

← 1 →