CURRENT-CARRIER TRANSPORT AND PHOTOCONDUCTIVITY IN SEMICONDUCTORS WITH TRAPPING

被引:42
作者
VANROOSBROECK, W
机构
来源
PHYSICAL REVIEW | 1960年 / 119卷 / 02期
关键词
D O I
10.1103/PhysRev.119.636
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:636 / 652
页数:17
相关论文
共 40 条
[1]  
ADIROVICH EI, 1956, DOKL AKAD NAUK SSSR+, V108, P417
[2]  
AMITH, COMMUNICATION
[3]   PHOTOCONDUCTIVE AND PHOTOELECTROMAGNETIC LIFETIME DETERMINATION IN PRESENCE OF TRAPPING .1. SMALL SIGNALS [J].
AMITH, A .
PHYSICAL REVIEW, 1959, 116 (04) :793-802
[4]  
AMITH A, 1959, B AM PHYS SOC, V4, P28
[6]   THE STATISTICS OF DIVALENT IMPURITY CENTRES IN A SEMICONDUCTOR [J].
CHAMPNESS, CH .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (12) :1335-1339
[7]  
CLARKE DH, 1957, J ELECTRON CONTR, V3, P375
[8]  
FAN HY, 1954, PHYS REV, V93, P1434, DOI 10.1103/PhysRev.93.1434.7
[9]   EFFECT OF TRAPS ON CARRIER INJECTION IN SEMICONDUCTORS [J].
FAN, HY .
PHYSICAL REVIEW, 1953, 92 (06) :1424-1428
[10]   ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J].
HALL, RN .
PHYSICAL REVIEW, 1952, 87 (02) :387-387