FORMATION OF ZNGA2SE4 EPITAXIAL LAYER DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF GA2SE3 ON ZNSE

被引：3

作者：

OKAMOTO, T ^{[1
]}

MIYASHITA, T ^{[1
]}

YAMADA, A ^{[1
]}

KONAGAI, M ^{[1
]}

TAKAHASHI, K ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,DEPT PHYS ELECTR,MEGURO KU,TOKYO 152,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1994年 / 33卷 / 8A期

关键词：

II-III2-VI4; COMPOUNDS; ZNGA2SE4; DEFECT CHALCOPYRITE STRUCTURE; III-VI COMPOUNDS; GA2SE3;

D O I：

10.1143/JJAP.33.L1059

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial ZnGa2Se4 films were successfully grown on (100)GaAs substrates for the first time. When Ga2Se3/ZnSe heterostructures were prepared on (100)GaAs by molecular beam epitaxy (MBE), a ZnGa2Se4 epitaxial layer was obtained at temperatures above 540-degrees-C. The electron diffraction and Raman spectra revealed that the c-axis-oriented ZnGa2Se4 epitaxial film with a defect chalcopyrite structure was formed during the MBE growth of Ga2 Se3 on ZnSe. Furthermore, a broad emission peak centered around 670 nm was observed in epitaxial ZnGa2Se4 film in low-temperature photoluminescence measurements.

引用

页码：L1059 / L1062

页数：4

共 15 条

[1]

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