POLARIZED PHOTOLUMINESCENCE IN VACANCY-ORDERED GA2SE3

被引：21

作者：

OKAMOTO, T

YAMADA, A

KONAGAI, M

TAKAHASHI, K

机构：

[1] TOKYO INST TECHNOL,DEPT ELECT & ELECTR ENGN,2-12-1 OOKAYAMA,MEGURO KU,TOKYO 152,JAPAN

[2] TOKYO INST TECHNOL,DEPT PHYS ELECTR,MEGURO KU,TOKYO 152,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 138卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)90807-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Optical properties of Ga2Se3 films grown on (100)GaAs by molecular beam epitaxy (MBE) have been investigated by photoluminescence (PL) measurement at low temperature. In the vacancy-ordered Ga2Se3 grown with a high VI/III ratio, a broad emission peak centered at around 610 nm was observed. Furthermore, the intensity of [011] polarization component was much stronger than that of [011] polarization in the vacancy-ordered Ga2Se3. On the other hand, in the disordered Ga2Se3 grown with a low VI/III ratio, PL intensity was extremely weak, and deep level emissions centered at around 750 and 900 nm were dominant.

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页码：204 / 207

页数：4

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