THE EFFECT OF GROWTH TEMPERATURE AND IMPURITY DOPING ON COMPOSITION OF LPE INGAASP ON INP

被引:7
作者
KUSUNOKI, T
AKITA, K
KOMIYA, S
NISHITANI, Y
机构
关键词
D O I
10.1016/0022-0248(82)90286-X
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:387 / 392
页数:6
相关论文
共 25 条
[1]   ELECTROREFLECTANCE AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE [J].
CARDONA, M ;
SHAKLEE, KL ;
POLLAK, FH .
PHYSICAL REVIEW, 1967, 154 (03) :696-+
[2]   SMALL-AREA, HIGH-RADIANCE CW INGAASP LEDS EMITTING AT 1.2 TO 1.3 MUM [J].
DENTAI, AG ;
LEE, TP ;
BURRUS, CA ;
BUEHLER, E .
ELECTRONICS LETTERS, 1977, 13 (16) :484-485
[3]   LATTICE-CONSTANT, BANDGAP, THICKNESS, AND SURFACE-MORPHOLOGY OF INGAASP-INP LAYERS GROWN BY STEP-COOLING, EQUILIBRIUM-COOLING, SUPERCOOLING AND 2-PHASE-SOLUTION GROWTH TECHNIQUES [J].
FENG, M ;
COOK, LW ;
TASHIMA, MM ;
STILLMAN, GE .
JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (02) :241-280
[4]   INFLUENCE OF GROWTH-SOLUTION DOPANTS ON DISTRIBUTION COEFFICIENTS IN THE LPE GROWTH OF INGAASP [J].
FENG, M ;
TASHIMA, MM ;
COOK, LW ;
MILANO, RA ;
STILLMAN, GE .
APPLIED PHYSICS LETTERS, 1979, 34 (01) :91-93
[5]   ROOM-TEMPERATURE CW OPERATION OF GALNASP-INP DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.1 MU-M [J].
HSIEH, JJ ;
ROSSI, JA ;
DONNELLY, JP .
APPLIED PHYSICS LETTERS, 1976, 28 (12) :709-711
[6]   ROOM-TEMPERATURE CW OPERATION OF BURIED-STRIPE DOUBLE-HETEROSTRUCTURE GALNASP/INP DIODE-LASERS [J].
HSIEH, JJ ;
SHEN, CC .
APPLIED PHYSICS LETTERS, 1977, 30 (08) :429-431
[7]  
HSIEH JJ, 1977, I PHYS C SER B, V33, P37
[8]   PHASE-DIAGRAM OF SYSTEM AL-GA-P [J].
ILEGEMS, M ;
PANISH, MB .
JOURNAL OF CRYSTAL GROWTH, 1973, 20 (02) :77-81
[9]   V-GROOVED SUBSTRATE BURIED HETEROSTRUCTURE INGAASP-INP LASER [J].
ISHIKAWA, H ;
IMAI, H ;
TANAHASHI, T ;
NISHITANI, Y ;
TAKUSAGAWA, M ;
TAKAHEI, K .
ELECTRONICS LETTERS, 1981, 17 (13) :465-467
[10]   BAND STRUCTURE AND HIGH-FIELD TRANSPORT PROPERTIES OF INP [J].
JAMES, LW ;
VANDYKE, JP ;
HERMAN, F ;
CHANG, DM .
PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (10) :3998-+