MINORITY CARRIER INJECTION OF METAL-SILICON CONTACTS

被引:46
作者
YU, AYC
SNOW, EH
机构
[1] Fairchild Semiconductor Research and Development Laboratory, Palo Alto, CA
关键词
D O I
10.1016/0038-1101(69)90027-6
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The minority carrier injection ratio from metal-silicon contacts has been measured using a metal-emitter transistor structure. Contacts of four different metals with barrier heights ranging from 0.65 to 0.85 eV on n-type silicon with doping level from 1014 to 6 × 1016 cm-3 were examined. This systematic investigation shows that the injection ratio at low current levels is a constant and is determined only by the barrier height of the contact and the doping of the semiconductor, while at high currents it increases with the total current. This result is in good agreement with theoretical predictions. © 1969.
引用
收藏
页码:155 / +
页数:1
相关论文
共 14 条