NEUTRON FLUENCE AND ELECTRIC FIELD STRENGTH DEPENDENCIES OF RATE OF VOLUME DAMAGE INTRODUCTION IN SILICON P-N JUNCTIONS

被引：3

作者：

GOBEN, CA

IRANI, CH

JOHNSON, PE

机构：

[1] Departments of Electrical and Nuclear Enqineering, Graduate Center for Materials Research, Rolla, University of Missouri

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1969年 / NS16卷 / 06期

关键词：

D O I：

10.1109/TNS.1969.4325504

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

[No abstract available]

引用

页码：43 / +

页数：1

共 18 条

[1]

AZAREWICZ JL, UNPUBLISHED RESEARCH

[2] AN AUTOMATIC DATA ACQUISITION SYSTEM FOR SEMICONDUCTOR DEVICE TESTING [J].

BARTLING, DL ;

JENKINS, CR ;

GOBEN, CA .

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 1968, IM17 (01) :19-+

[3]

BEREISA J, UNPUBLISHED RESEARCH

[4] ANNEALING CHARACTERISTICS OF NEUTRON IRRADIATED SILICON TRANSISTORS [J].

CHOTT, JR ;

GOBEN, CA .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1967, NS14 (06) :134-+

[5] RECOMBINATION STATISTICS FOR NEUTRON BOMBARDED SILICON TRANSISTORS [J].

CHOW, MC ;

AZAREWICZ, JL ;

GOBEN, CA .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1968, NS15 (06) :88-+

[6] NEUTRON RADIATION DAMAGE IN SILICON TRANSISTORS [J].

GOBEN, CA ;

SMITS, FM ;

WIRTH, JL .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1968, NS15 (02) :14-&

[7] A STUDY OF NEUTRON-INDUCED BASE CURRENT COMPONENT IN SILICON TRANSISTORS [J].

GOBEN, CA .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1965, NS12 (05) :134-+

[8]

GOBEN CA, TO BE PUBLISHED

[9]

GOBEN CA, 1964, SCR641373 SAND LAB P

[10]

GOBEN CA, 1965, THESIS IOWA STATE U

← 1 2 →