HOT-ELECTRON TRANSPORT IN EPITAXIAL COSI2 FILMS

被引：9

作者：

DUBOZ, JY ^{[1
]}

BADOZ, PA ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,CTR NORBERT SEGARD,F-38243 MEYLAN,FRANCE

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.44.8061

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a calculation of the photoelectric quantum yield of Schottky diodes, taking into account the spatial distribution of photon absorption in the metal film. We also present measurements of the quantum yield of epitaxial CoSi2 diodes, with metal thicknesses varying from 25 angstrom up to 1000 angstrom. A comparison of our experimental data with the results of this model leads to the determination of the escape depth of the hot electrons in CoSi2. The escape depth was found to be around 90 angstrom at room temperature and 100 angstrom at 77 K for 0.75-eV incident-photon energy and to decrease slightly with photon energy. These results are discussed and interpreted in terms of electron-phonon and electron-electron interactions.

引用

页码：8061 / 8067

页数：7

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