BALLISTIC TRANSPORT IN SEMICONDUCTORS - A DISPLACED MAXWELLIAN FORMULATION

被引：10

作者：

ROSENCHER, E

机构：

来源：

JOURNAL DE PHYSIQUE | 1981年 / 42卷 / NC7期

关键词：

D O I：

10.1051/jphyscol:1981743

中图分类号：

学科分类号：

摘要：

引用

页码：351 / 356

页数：6

共 11 条

[1]

BOSH R, 1974, IEEE T ELECTRON DEV, V21, P16

[2]

CONWELL EM, 1967, SOLID STATE PHYSIC S, V9

KALMAN, G .

[4]

Llewellyn FB., 1944, PROC, V32, P144, DOI [DOI 10.1109/JRPROC.1944.230037, 10.1109/JRPROC.1944.230037]

[5]

MONTGOMERY DC, 1971, THEORY UNMAGNETIZED

[6]

ROSENCHER E, 1981, UNPUB SOLID STATE CO

[7] ELECTRON DYNAMICS IN SHORT CHANNEL FIELD-EFFECT TRANSISTORS [J].

RUCH, JG .

[8]

SEEGER K, 1973, SEMICONDUCTOR PHYSIC

SHUR, M .

[10] NEAR BALLISTIC ELECTRON-TRANSPORT IN GAAS DEVICES AT 77-DEGREES-K [J].

SHUR, MS ;

EASTMAN, LF .