CHARACTERISTICS OF NITROGEN-DOPED ZNTE FILMS AND ZNTE-ZNSE SUPERLATTICES GROWN BY HOT-WALL EPITAXY

被引：6

作者：

SAKAKIBARA, S ^{[1
]}

AMANO, N ^{[1
]}

ISHINO, K ^{[1
]}

ISHIDA, A ^{[1
]}

FUJIYASU, H ^{[1
]}

机构：

[1] SHIZUOKA UNIV,GRAD SCH ELECTR SCI & TECHNOL,HAMAMATSU,SHIZUOKA 432,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 10期

关键词：

II-VI COMPOUND SEMICONDUCTOR; ZNTE FILM; NITROGEN DOPING; P-TYPE CONDUCTIVITY; ZNTE-ZNSE SUPERLATTICE; HOT WALL EPITAXY;

D O I：

10.1143/JJAP.32.4703

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nitrogen-doped (N-doped) p-type ZnTe films have been prepared on GaAs(100) substrates by hot wall epitaxy (HWE) for the first time. To obtain high-quality films with high hole concentrations, optimum growth conditions such as the substrate temperature and the growth rate were studied by X-ray and Photoluminescence (PL) measurements. The hole concentration and Hall mobility were 1.1 x 10(17) CM-3 and 52 CM2 V-1 s-1, respectively. The PL spectra of these films had a excitonic emission (I1), indicating high crystalline quality. The activation energy of the nitrogen acceptor was calculated, for the first time, to be 51 meV from the donor-acceptor (DA) emission energy. The existence of nitrogen in the films was confirmed by secondary ion mass spectroscopy (SIMS). The N-doped ZnTe-ZnSe SL's were also prepared and the hole concentration and Hall mobility were 2.3 x 10(18) CM-3 and 36 cm2 V-1 s-1, respectively.

引用

页码：4703 / 4708

页数：6

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