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- [1] LOW-TEMPERATURE GROWTH OF ALAS/GAAS HETEROSTRUCTURES BY MODULATED MOLECULAR-BEAM EPITAXY[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (07): : L1125 - L1127BRIONES, FGONZALEZ, LRECIO, MVAZQUEZ, M
- [2] HIGH-QUALITY P-N-JUNCTIONS IN INGAAS/GAAS STRAINED-LAYER SUPERLATTICES[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02): : 179 - 180DAWSON, LROSBOURN, GCZIPPERIAN, TEWICZER, JJBARNES, CEFRITZ, IJBIEFELD, RM
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- [4] LOW-TEMPERATURE GROWTH OF GAAS AND ALAS-GAAS QUANTUM-WELL LAYERS BY MODIFIED MOLECULAR-BEAM EPITAXY[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (10): : L868 - L870HORIKOSHI, YKAWASHIMA, MYAMAGUCHI, H
- [5] PHOTOLUMINESCENCE CHARACTERISTICS OF ALGAAS-GAAS SINGLE QUANTUM-WELLS GROWN BY MIGRATION-ENHANCED EPITAXY AT 300-DEGREES-C SUBSTRATE-TEMPERATURE[J]. APPLIED PHYSICS LETTERS, 1987, 50 (23) : 1686 - 1687HORIKOSHI, YKAWASHIMA, MYAMAGUCHI, H
- [6] KARASAWA T, 1988, 5TH INT C MOL BEAM E, P304
- [7] REALIZATION OF BOTH P-TYPE AND N-TYPE CONDUCTION FOR ZNSE-ZNTE STRAINED-LAYER SUPERLATTICES[J]. APPLIED PHYSICS LETTERS, 1987, 51 (20) : 1602 - 1604KOBAYASHI, MDOSHO, SIMAI, AKIMURA, RKONAGAI, MTAKAHASHI, K
- [8] LATTICE STRAIN AND LATTICE-DYNAMICS OF ZNSE-ZNTE STRAINED-LAYER SUPERLATTICES[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (03) : 1015 - 1022KOBAYASHI, MKONAGAI, MTAKAHASHI, KURABE, K
- [9] GROWTH OF A ZNSE-ZNTE STRAINED-LAYER SUPERLATTICE ON AN INP SUBSTRATE BY MOLECULAR-BEAM EPITAXY[J]. APPLIED PHYSICS LETTERS, 1986, 48 (04) : 296 - 297KOBAYASHI, MMINO, NKATAGIRI, HKIMURA, RKONAGAI, MTAKAHASHI, K
- [10] ABRUPT P-TYPE DOPING PROFILE OF CARBON ATOMIC LAYER DOPED GAAS GROWN BY FLOW-RATE MODULATION EPITAXY[J]. APPLIED PHYSICS LETTERS, 1987, 50 (20) : 1435 - 1437KOBAYASHI, NMAKIMOTO, THORIKOSHI, Y