ATOMIC LAYER EPITAXY OF ZNSE-ZNTE STRAINED LAYER SUPERLATTICES

[1] LOW-TEMPERATURE GROWTH OF ALAS/GAAS HETEROSTRUCTURES BY MODULATED MOLECULAR-BEAM EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (07): : L1125 - L1127

[2] HIGH-QUALITY P-N-JUNCTIONS IN INGAAS/GAAS STRAINED-LAYER SUPERLATTICES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02): : 179 - 180

[3] LOW-TEMPERATURE GROWTH OF GAAS AND ALAS-GAAS QUANTUM-WELL LAYERS BY MODIFIED MOLECULAR-BEAM EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (10): : L868 - L870

[4] PHOTOLUMINESCENCE CHARACTERISTICS OF ALGAAS-GAAS SINGLE QUANTUM-WELLS GROWN BY MIGRATION-ENHANCED EPITAXY AT 300-DEGREES-C SUBSTRATE-TEMPERATURE [J]. APPLIED PHYSICS LETTERS, 1987, 50 (23) : 1686 - 1687

[5] LATTICE STRAIN AND LATTICE-DYNAMICS OF ZNSE-ZNTE STRAINED-LAYER SUPERLATTICES [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (03) : 1015 - 1022

[6] KOBAYASHI M, 1986, APPL PHYS LETT, V48, P286

[7] ABRUPT P-TYPE DOPING PROFILE OF CARBON ATOMIC LAYER DOPED GAAS GROWN BY FLOW-RATE MODULATION EPITAXY [J]. APPLIED PHYSICS LETTERS, 1987, 50 (20) : 1435 - 1437

[8] IMPROVED FLATNESS IN GAAS/ALGAAS HETEROINTERFACES GROWN BY FLOW-RATE MODULATION EPITAXY [J]. APPLIED PHYSICS LETTERS, 1987, 50 (14) : 909 - 911

[9] TWO-DIMENSIONAL METASTABLE MAGNETIC SEMICONDUCTOR STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1986, 48 (21) : 1482 - 1484

[10] LIDBURY DPG, 1971, ELECTRON ENG, V43, P50

[1] LOW-TEMPERATURE GROWTH OF ALAS/GAAS HETEROSTRUCTURES BY MODULATED MOLECULAR-BEAM EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (07): : L1125 - L1127

[2] HIGH-QUALITY P-N-JUNCTIONS IN INGAAS/GAAS STRAINED-LAYER SUPERLATTICES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02): : 179 - 180

[3] LOW-TEMPERATURE GROWTH OF GAAS AND ALAS-GAAS QUANTUM-WELL LAYERS BY MODIFIED MOLECULAR-BEAM EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (10): : L868 - L870

[4] PHOTOLUMINESCENCE CHARACTERISTICS OF ALGAAS-GAAS SINGLE QUANTUM-WELLS GROWN BY MIGRATION-ENHANCED EPITAXY AT 300-DEGREES-C SUBSTRATE-TEMPERATURE [J]. APPLIED PHYSICS LETTERS, 1987, 50 (23) : 1686 - 1687

[5] LATTICE STRAIN AND LATTICE-DYNAMICS OF ZNSE-ZNTE STRAINED-LAYER SUPERLATTICES [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (03) : 1015 - 1022

[6] KOBAYASHI M, 1986, APPL PHYS LETT, V48, P286

[7] ABRUPT P-TYPE DOPING PROFILE OF CARBON ATOMIC LAYER DOPED GAAS GROWN BY FLOW-RATE MODULATION EPITAXY [J]. APPLIED PHYSICS LETTERS, 1987, 50 (20) : 1435 - 1437

[8] IMPROVED FLATNESS IN GAAS/ALGAAS HETEROINTERFACES GROWN BY FLOW-RATE MODULATION EPITAXY [J]. APPLIED PHYSICS LETTERS, 1987, 50 (14) : 909 - 911

[9] TWO-DIMENSIONAL METASTABLE MAGNETIC SEMICONDUCTOR STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1986, 48 (21) : 1482 - 1484

[10] LIDBURY DPG, 1971, ELECTRON ENG, V43, P50