ANALYSIS OF DEFECT DISTRIBUTION IN TRANSISTOR STRUCTURES WITH REFLECTION AND TRANSMISSION X-RAY TOPOGRAPHY

被引：3

作者：

HOWARD, JK

SMITH, PJ

机构：

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1971年 / 15卷 / 02期

关键词：

D O I：

10.1147/rd.152.0123

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：123 / &

共 28 条

[1]

Barrett C S, 1952, STRUCTURE METALS, V2rd

[2] DIFFUSION PIPES IN SILICON NPN STRUCTURES [J].

BARSON, F ;

HESS, MS ;

ROY, MM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (02) :304-&

[3] DYNAMICAL DIFFRACTION OF X RAYS BY PERFECT CRYSTALS [J].

BATTERMAN, BW ;

COLE, H .

REVIEWS OF MODERN PHYSICS, 1964, 36 (03) :681-&

[4] OBSERVATIONS OF INDIVIDUAL DISLOCATIONS AND OXYGEN PRECIPITATES IN SILICON WITH A SCANNING ELECTRON BEAM METHOD [J].

CZAJA, W ;

PATEL, JR .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (04) :1476-&

[5] EFFECTS OF HIGH PHOSPHORUS CONCENTRATION ON DIFFUSION INTO SILICON [J].

DUFFY, MC ;

BARSON, F ;

FAIRFIEL.JM ;

SCHWUTTK.GH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (01) :84-&

[6] INFLUENCE OF CRYSTALLOGRAPHIC DEFECTS ON DEVICE PERFORMANCE [J].

FAIRFIELD, JM ;

SCHWUTTK.GH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (11) :1229-+

[7] CROSS SECTIONS AND OHMIC RESISTANCE OF DIFFUSION PIPES IN SILICON [J].

GOETZBERGER, A ;

STEPHENS, C .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (07) :604-607

[8] A NEW SCANNING-REFLECTION X-RAY TOPOGRAPHIC METHOD (NEW METHOD FOR STUDYING LARGE-AREA FILMS - E [J].

HOWARD, JK ;

DOBROTT, RD .

APPLIED PHYSICS LETTERS, 1965, 7 (04) :101-&

[9] COMPOSITIONAL X-RAY TOPOGRAPHY [J].

HOWARD, JK ;

DOBROTT, RD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (06) :567-&

[10] TEMPERATURE DISTRIBUTION AND STRESSES IN CIRCULAR WAFERS IN A ROW DURING RADIATIVE COOLING [J].

HU, SM .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) :4413-+

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