REAL SPACE TRANSFER - GENERALIZED-APPROACH TO TRANSPORT IN CONFINED GEOMETRIES

被引：22

作者：

HESS, K ^{[1
]}

机构：

[1] UNIV ILLINOIS, DEPT ELECT & COMP ENGN, URBANA, IL 61801 USA

来源：

关键词：

D O I：

10.1016/0038-1101(88)90286-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：319 / 324

页数：6

共 18 条

[1] A THEORY OF ENHANCED IMPACT IONIZATION DUE TO THE GATE FIELD AND MOBILITY DEGRADATION IN THE INVERSION LAYER OF MOSFETS
BRENNAN, K
HESS, K
[J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (02) : 86 - 88
[2] RESONANT CARRIER CAPTURE BY SEMICONDUCTOR QUANTUM-WELLS
BRUM, JA
BASTARD, G
[J]. PHYSICAL REVIEW B, 1986, 33 (02) : 1420 - 1423
[3] BAND-GAP ENGINEERING - FROM PHYSICS AND MATERIALS TO NEW SEMICONDUCTOR-DEVICES
CAPASSO, F
[J]. SCIENCE, 1987, 235 (4785) : 172 - 176
[4] HESS K, 1980, PHYSICS TODAY OCT
[5] HESS K, 1981, J PHYS C SOLID STATE, V7, P3
[6] HESS K, 1985, FESTKORPERPROBLEME, V25, P321
[7] HESS K, 1980, PHYSICS NONLINEAR TR, P32
[8] HIGMAN TK, IN PRESS J APPL PHYS
[9] HIGMAN TK, UNPUB
[10] HOLONYAK N, 1984, QUANTUMWELL SUPERLAT