DYNAMIC TREATMENT OF THE SPLITTING OF HOLZ LINES FROM DISLOCATIONS IN SILICON

被引:6
作者
ZOU, HM
YAO, XF
WANG, RH
机构
[1] WUHAN UNIV,DEPT PHYS,WUHAN 430072,PEOPLES R CHINA
[2] ACAD SINICA,BEIJING LAB ELECTRON MICROSCOPY,BEIJING 100080,PEOPLES R CHINA
来源
ACTA CRYSTALLOGRAPHICA SECTION A | 1991年 / 47卷
关键词
D O I
10.1107/S0108767391003367
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The splitting of high-order Laue-zone (HOLZ) lines of convergent-beam electron diffraction (CBED) due to the presence of dislocations in Si was investigated experimentally and theoretically. The parameters affecting the separation and relative positions of the fringes of split HOLZ lines were examined with experiments and/or computations. According to the results obtained, a method for identification of Burgers vector is discussed.
引用
收藏
页码:490 / 497
页数:8
相关论文
共 17 条
[1]   BLOCH WAVES AND HIGHER-ORDER LAUE ZONE EFFECTS IN HIGH-ENERGY ELECTRON-DIFFRACTION [J].
BUXTON, BF .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 1976, 350 (1662) :335-&
[2]   3-DIMENSIONAL STRAIN-FIELD INFORMATION IN CONVERGENT-BEAM ELECTRON-DIFFRACTION PATTERNS [J].
CARPENTER, RW ;
SPENCE, JCH .
ACTA CRYSTALLOGRAPHICA SECTION A, 1982, 38 (JAN) :55-&
[3]   ELECTRON-DIFFRACTION STUDIES OF STRAIN IN EPITAXIAL BICRYSTALS AND MULTILAYERS [J].
CHERNS, D ;
KIELY, CJ ;
PRESTON, AR .
ULTRAMICROSCOPY, 1988, 24 (04) :355-370
[4]  
CHERNS D, 1986, 11TH P INT C EL MICR, P721
[5]   HIGHER-ORDER LAUE ZONE EFFECTS OF STACKING-FAULTED CRYSTALS [J].
CHOU, CT ;
ZHAO, LJ ;
KO, T .
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1989, 59 (06) :1221-1243
[6]  
COWLEY JM, 1981, DIFFRACTION PHYSICS
[8]  
HEAD AK, 1973, COMPUTED ELECTRON MI
[9]   HIGHER-ORDER LAUE ZONE EFFECTS IN ELECTRON-DIFFRACTION AND THEIR USE IN LATTICE-PARAMETER DETERMINATION [J].
JONES, PM ;
RACKHAM, GM ;
STEEDS, JW .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 1977, 354 (1677) :197-&
[10]   SIMULATION AND APPLICATION OF THE DISTORTED ZOLZ PATTERNS FROM DISLOCATIONS IN SI [J].
LU, G ;
WEN, JG ;
ZHANG, W ;
WANG, R .
ACTA CRYSTALLOGRAPHICA SECTION A, 1990, 46 :103-112