FREQUENCY-DEPENDENCE OF POSITRON-ANNIHILATION SIGNAL FROM MOS STRUCTURE

被引：7

作者：

AU, HL ^{[1
]}

ASOKAKUMAR, P ^{[1
]}

BELING, CD ^{[1
]}

FUNG, S ^{[1
]}

LYNN, KG ^{[1
]}

机构：

[1] BROOKHAVEN NATL LAB,UPTON,NY 11973

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1993年 / 178卷 / 01期

关键词：

D O I：

10.1002/pssb.2221780127

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

[No abstract available]

引用

页码：K11 / K15

页数：5

共 8 条

[1] ASOKAKUMAR P, 1991, PHYS REV B, V44, P11
[2] BAKER JA, 1988, J PHYS CONDENS MATT, V1, pSB39
[3] LANG DV, 1974, J APPL PHYS, V45, P7
[4] POSITRON-ANNIHILATION AT THE SI/SIO2 INTERFACE
LEUNG, TC
WEINBERG, ZA
ASOKAKUMAR, P
NIELSEN, B
RUBLOFF, GW
LYNN, KG
[J]. JOURNAL OF APPLIED PHYSICS, 1992, 71 (01) : 530 - 532
[5] LEUNG TC, THESIS STATE U NEW Y
[6] SIO2/SI INTERFACE PROBED WITH A VARIABLE-ENERGY POSITRON BEAM
NIELSEN, B
LYNN, KG
CHEN, YC
WELCH, DO
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (13) : 1022 - 1023
[7] INTERACTION OF POSITRON BEAMS WITH SURFACES, THIN-FILMS, AND INTERFACES
SCHULTZ, PJ
LYNN, KG
[J]. REVIEWS OF MODERN PHYSICS, 1988, 60 (03) : 701 - 779
[8] METAL-OXIDE-SEMICONDUCTOR INTERFACE INVESTIGATED BY MONOENERGETIC POSITRONS
UEDONO, A
TANIGAWA, S
OHJI, Y
[J]. PHYSICS LETTERS A, 1988, 133 (1-2) : 82 - 84