SIO2/SI INTERFACE PROBED WITH A VARIABLE-ENERGY POSITRON BEAM

被引：77

作者：

NIELSEN, B

LYNN, KG

CHEN, YC

WELCH, DO

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 13期

关键词：

D O I：

10.1063/1.98818

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1022 / 1023

页数：2

共 15 条

[1]

[Anonymous], 1983, POSITRON SOLID STATE

[2]

Grove A S, 1967, PHYS TECHNOLOGY SEMI

[3]

HAUTOJARVI P, 1979, TOPICS CURRENT PHYSI

[4] REDUCTION OF ELECTRON TRAPPING IN SILICON DIOXIDE BY HIGH-TEMPERATURE NITROGEN ANNEAL [J].

LAI, SK ;

YOUNG, DR ;

CALISE, JA ;

FEIGL, FJ .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) :5691-5695

[5]

Lynn K. G., 1983, POSITRON SOLID STATE, P609

[6] DEVELOPMENT AND USE OF A THIN-FILM TRANSMISSION POSITRON MODERATOR [J].

LYNN, KG ;

NIELSEN, B ;

QUATEMAN, JH .

APPLIED PHYSICS LETTERS, 1985, 47 (03) :239-240

[7] VARIABLE-ENERGY POSITRON-BEAM STUDIES OF NI IMPLANTED WITH HE [J].

LYNN, KG ;

CHEN, DM ;

NIELSEN, B ;

PAREJA, R ;

MYERS, S .

PHYSICAL REVIEW B, 1986, 34 (03) :1449-1458

[8] SLOW-POSITRON APPARATUS FOR SURFACE STUDIES [J].

LYNN, KG ;

LUTZ, H .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1980, 51 (07) :977-982

[9]

MILLS AP, 1983, POSITRON SOLID STATE, P432

[10] POSITRON DIFFUSION IN SI [J].

NIELSEN, B ;

LYNN, KG ;

VEHANEN, A ;

SCHULTZ, PJ .

PHYSICAL REVIEW B, 1985, 32 (04) :2296-2301

← 1 2 →