METAL-OXIDE-SEMICONDUCTOR INTERFACE INVESTIGATED BY MONOENERGETIC POSITRONS

被引：25

作者：

UEDONO, A ^{[1
]}

TANIGAWA, S ^{[1
]}

OHJI, Y ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN

来源：

PHYSICS LETTERS A | 1988年 / 133卷 / 1-2期

关键词：

D O I：

10.1016/0375-9601(88)90742-6

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：82 / 84

页数：3

共 13 条

[1] UMKLAPP ANNIHILATION OF POSITRONIUM IN CRYSTALS [J].

HODGES, CH ;

MCKEE, BTA ;

TRIFTSHAUSER, W ;

STEWART, AT .

CANADIAN JOURNAL OF PHYSICS, 1972, 50 (02) :103-+

[2] PRODUCTION AND USE OF LOW-ENERGY, MONOENERGETIC POSITRON BEAMS FROM ELECTRON LINACS [J].

HOWELL, RH ;

ROSENBERG, IJ ;

FLUSS, MJ .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 43 (04) :247-255

[3] HYDROGEN-IMPLANTATION-INDUCED DAMAGE IN SILICON [J].

KEINONEN, J ;

HAUTALA, M ;

RAUHALA, E ;

EROLA, M ;

LAHTINEN, J ;

HUOMO, H ;

VEHANEN, A ;

HAUTOJARVI, P .

PHYSICAL REVIEW B, 1987, 36 (02) :1344-1347

[4] VARIABLE-ENERGY POSITRON-BEAM STUDIES OF NI IMPLANTED WITH HE [J].

LYNN, KG ;

CHEN, DM ;

NIELSEN, B ;

PAREJA, R ;

MYERS, S .

PHYSICAL REVIEW B, 1986, 34 (03) :1449-1458

[5] TRANSMISSION OF 1-6-KEV POSITRONS THROUGH THIN METAL-FILMS [J].

MILLS, AP ;

WILSON, RJ .

PHYSICAL REVIEW A, 1982, 26 (01) :490-500

[6]

MILLS AP, 1982, 6TH P INT C POS ANN, P121

[7] SIO2/SI INTERFACE PROBED WITH A VARIABLE-ENERGY POSITRON BEAM [J].

NIELSEN, B ;

LYNN, KG ;

CHEN, YC ;

WELCH, DO .

APPLIED PHYSICS LETTERS, 1987, 51 (13) :1022-1023

[8]

SIEGEL RW, 1982, 6TH P INT C POS ANN, P351

[9] A STUDY OF AGGLOMERATION AND RELEASE PROCESSES OF HELIUM IMPLANTED IN NICKEL BY A VARIABLE ENERGY POSITRON BEAM [J].

TANIGAWA, S ;

IWASE, Y ;

UEDONO, A ;

SAKAIRI, H .

JOURNAL OF NUCLEAR MATERIALS, 1985, 133 (AUG) :463-467

[10] DEFECT STRUCTURES BELOW THE SURFACE IN METALS INVESTIGATED BY MONOENERGETIC POSITRONS [J].

TRIFTSHAUSER, W ;

KOGEL, G .

PHYSICAL REVIEW LETTERS, 1982, 48 (25) :1741-1744

← 1 2 →