SILVER OVERLAYERS ON (110) INDIUM-PHOSPHIDE - FILM GROWTH AND SCHOTTKY-BARRIER FORMATION

被引：43

作者：

MCKINLEY, A

PARKE, AW

WILLIAMS, RH

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1980年 / 13卷 / 36期

关键词：

D O I：

10.1088/0022-3719/13/36/024

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：6723 / 6736

页数：14

相关论文

共 29 条

[1] TRANSITION IN SCHOTTKY-BARRIER FORMATION WITH CHEMICAL REACTIVITY
BRILLSON, LJ
[J]. PHYSICAL REVIEW LETTERS, 1978, 40 (04) : 260 - 263
[2] (110) SURFACE-STATES OF GAAS - SENSITIVITY OF ELECTRONIC-STRUCTURE TO SURFACE-STRUCTURE
CHADI, DJ
[J]. PHYSICAL REVIEW B, 1978, 18 (04) : 1800 - 1812
[3] PHOTOEMISSION STUDY OF AU SCHOTTKY-BARRIER FORMATION ON GASB, GAAS, AND INP USING SYNCHROTRON RADIATION
CHYE, PW
LINDAU, I
PIANETTA, P
GARNER, CM
SU, CY
SPICER, WE
[J]. PHYSICAL REVIEW B, 1978, 18 (10): : 5545 - 5559
[4] ENERGY-LEVELS OF SEMICONDUCTOR SURFACE VACANCIES
DAW, MS
SMITH, DL
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 1028 - 1031
[5] A SIMPLE MODEL FOR DEPENDENCE OF AUGER INTENSITIES ON SPECIMEN THICKNESS
GALLON, TE
[J]. SURFACE SCIENCE, 1969, 17 (02) : 486 - &
[6] SURFACE STRUCTURE OF EPITAXIAL SILVER FILM ON GAAS (110) SURFACE
HANAWA, T
SAGAWA, M
NAGATA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (08) : 1111 - &
[7] THEORY OF SURFACE STATES
HEINE, V
[J]. PHYSICAL REVIEW, 1965, 138 (6A): : 1689 - &
[8] CORRELATION BETWEEN SURFACE STRUCTURE AND SURFACE STATES AT CLEAN GERMANIUM-(111) SURFACE
HENZLER, M
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) : 3758 - &
[9] ROOM-TEMPERATURE INTERFACIAL REACTION IN AU-SEMICONDUCTOR SYSTEMS
HIRAKI, A
SHUTO, K
KIM, S
KAMMURA, W
IWAMI, M
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (09) : 611 - 612
[10] ANGLE-RESOLVED PHOTOEMISSION FROM GAAS (110) SURFACE-STATES
HUIJSER, A
VANLAAR, J
VANROOY, TL
[J]. PHYSICS LETTERS A, 1978, 65 (04) : 337 - 339