PROPERTIES OF CENTER AND EDGE DELTA-DOPED GAAS-ALGAAS QUANTUM-WELLS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：17

作者：

KIM, Y

KIM, MS

MIN, SK

机构：

[1] Semiconductor Materials Laboratory, Korea Institute of Science and Technology, Cheongryang, Seoul 130-650

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 07期

关键词：

D O I：

10.1063/1.108856

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the properties of center and edge delta-doped GaAs-AlGaAs quantum wells grown by atmospheric pressure metalorganic chemical vapor deposition (MOCVD) by means of capacitance voltage (C-V) profiling and temperature-dependent photoluminescence (PL) measurements. For the center delta-doped quantum well, a narrow C-V profile and the Fermi-edge singularity in PL have been confirmed. In contrast, for edge delta-doped quantum wells, a double-peaked C-V profile and a sharp luminescence enhancement near the Fermi level which is not due to the Fermi-edge singularity, have been observed. The results are explained by a simple model based on the asymmetrical potential well induced by the band bending due to the delta-doping at one side of the heterointerfaces.

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页码：741 / 743

页数：3

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