DELTA-DOPED QUANTUM-WELL STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY

被引：44

作者：

LIU, DG

LEE, CP

CHANG, KH

WU, JS

LIOU, DC

机构：

[1] Institute of Electronics, National Chiao Tung University, Hsin Chu

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 18期

关键词：

D O I：

10.1063/1.104001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Delta doping in quantum well structures has been studied. The quantum wells consist of a strained InGaAs layer sandwiched between two GaAs layers. The layers were undoped except for a sheet of Si dopants deposited in the middle of the quantum well. Structures with various doses and quantum well thicknesses were studied and compared. Capacitance voltage measurements were carried out to determine the carrier distribution. A very narrow carrier profile with a full width at half maximum of only 12 Å has been achieved. This is the narrowest carrier profile ever reported for any growth technique.

引用

页码：1887 / 1888

页数：2

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