DIFFUSION OF ATOMIC SILICON IN GALLIUM-ARSENIDE

[1] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J]. REVIEWS OF MODERN PHYSICS, 1982, 54 (02) : 437 - 672

[2] Casey H.C., 1973, ATOMIC DIFFUSION SEM, P351

[3] DIFFUSION OF SILICON IN GALLIUM-ARSENIDE USING RAPID THERMAL-PROCESSING - EXPERIMENT AND MODEL [J]. APPLIED PHYSICS LETTERS, 1984, 44 (08) : 750 - 752

[4] DIFFUSION AND ELECTRICAL-PROPERTIES OF SILICON-DOPED GALLIUM-ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5181 - 5191

[5] EFFICIENT SI PLANAR DOPING IN GAAS BY FLOW-RATE MODULATION EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (09): : L746 - L748

[6] CLOSED-TUBE DIFFUSION OF SILICON IN GAAS FROM SPUTTERED SILICON FILM [J]. ELECTRONICS LETTERS, 1986, 22 (09) : 496 - 498

[7] SPATIAL LOCALIZATION OF IMPURITIES IN DELTA-DOPED GAAS [J]. APPLIED PHYSICS LETTERS, 1988, 52 (18) : 1508 - 1510

[1] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J]. REVIEWS OF MODERN PHYSICS, 1982, 54 (02) : 437 - 672

[2] Casey H.C., 1973, ATOMIC DIFFUSION SEM, P351

[3] DIFFUSION OF SILICON IN GALLIUM-ARSENIDE USING RAPID THERMAL-PROCESSING - EXPERIMENT AND MODEL [J]. APPLIED PHYSICS LETTERS, 1984, 44 (08) : 750 - 752

[4] DIFFUSION AND ELECTRICAL-PROPERTIES OF SILICON-DOPED GALLIUM-ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5181 - 5191

[5] EFFICIENT SI PLANAR DOPING IN GAAS BY FLOW-RATE MODULATION EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (09): : L746 - L748

[6] CLOSED-TUBE DIFFUSION OF SILICON IN GAAS FROM SPUTTERED SILICON FILM [J]. ELECTRONICS LETTERS, 1986, 22 (09) : 496 - 498

[7] SPATIAL LOCALIZATION OF IMPURITIES IN DELTA-DOPED GAAS [J]. APPLIED PHYSICS LETTERS, 1988, 52 (18) : 1508 - 1510