IDENTIFICATION AND PROPERTIES OF DEFECTS IN GAP

被引：45

作者：

SCHEFFLER, M ^{[1
]}

PANTELIDES, ST ^{[1
]}

LIPARI, NO ^{[1
]}

BERNHOLC, J ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW LETTERS | 1981年 / 47卷 / 06期

关键词：

D O I：

10.1103/PhysRevLett.47.413

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：413 / 416

页数：4

相关论文

共 17 条

[1] SELF-CONSISTENT GREENS FUNCTION CALCULATION OF IDEAL SI VACANCY
BARAFF, GA
SCHLUTER, M
[J]. PHYSICAL REVIEW LETTERS, 1978, 41 (13) : 892 - 895
[2] NEW SELF-CONSISTENT APPROACH TO THE ELECTRONIC-STRUCTURE OF LOCALIZED DEFECTS IN SOLIDS
BARAFF, GA
SCHLUTER, M
[J]. PHYSICAL REVIEW B, 1979, 19 (10): : 4965 - 4979
[3] SELF-CONSISTENT METHOD FOR POINT-DEFECTS IN SEMICONDUCTORS - APPLICATION TO VACANCY IN SILICON
BERNHOLC, J
LIPARI, NO
PANTELIDES, ST
[J]. PHYSICAL REVIEW LETTERS, 1978, 41 (13) : 895 - 899
[4] SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .2. SELF-CONSISTENT FORMULATION AND APPLICATION TO THE VACANCY IN SILICON
BERNHOLC, J
LIPARI, NO
PANTELIDES, ST
[J]. PHYSICAL REVIEW B, 1980, 21 (08): : 3545 - 3562
[5] OPTICAL PROPERTIES OF GROUP 4 ELEMENTS CARBON AND SILICON IN GALLIUM PHOSPHIDE
DEAN, PJ
FROSCH, CJ
HENRY, CH
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) : 5631 - &
[6] SEMICONDUCTOR CHARGE-DENSITIES WITH HARD-CORE AND SOFT-CORE PSEUDOPOTENTIALS
HAMANN, DR
[J]. PHYSICAL REVIEW LETTERS, 1979, 42 (10) : 662 - 665
[7] IHM J, 1978, PHYS REV B, V17, P706
[8] JAROS M, 1978, J PHYS C, V11, pL216
[9] ESR DETECTION OF ANTISITE LATTICE-DEFECTS IN GAP, CDSIP2, AND ZNGEP2
KAUFMANN, U
SCHNEIDER, J
RAUBER, A
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (05) : 312 - 313
[10] KAUFMANN U, UNPUBLISHED