DAMAGE FORMATION AND SUBSTITUTIONALITY IN AS-75++-IMPLANTED DIAMOND

Rutherford backscattering spectrometry (RBS) has been used to study damage formation and substitutionality in synthetic diamonds implanted with 250-keV As-75 + + at either 600-degrees-C or room temperature. Lattice damage following implantation at 600-degrees-C was substantially less than damage following room-temperature implantation and appears to be composed of a higher fraction of extended defects. A significant portion of the As implanted at 600-degrees-C was found to be in substitutional lattice sites with substitutional fractions as high as 50%. Changing the ion flux by three orders of magnitude during high-temperature implantation had no effect on either residual damage or substitutionality as indicated by the RBS analysis.