NEW MODEL FOR DAMAGE ACCUMULATION IN SI DURING SELF-ION IRRADIATION

[1] Appleton B. R., 1970, Atomic collision phenomena in solids, P417

[2] BAUER LO, 1983, ION IMPLANTATION SEM, V1, P119

[3] DEFECT STUDIES IN CRYSTALS BY MEANS OF CHANNELING [J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 653 - &

[4] Chadderton L. T., 1971, Radiation Effects, V8, P77, DOI 10.1080/00337577108231012

[5] SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3906 - 3911

[6] AMORPHIZATION OF SILICON BY ION-IMPLANTATION - HOMOGENEOUS OR HETEROGENEOUS NUCLEATION [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 30 (04): : 219 - 225

[7] Eisen F. H., 1971, Radiation Effects, V7, P143, DOI 10.1080/00337577108232575

[8] EISEN FH, 1970, P EUROPEAN C ION IMP, P227

[9] ELGHOR MK, IN PRESS J MATER RES

[10] HIRVONEN JK, 1971, P 2 INT C ION IMPL S, P8

[1] Appleton B. R., 1970, Atomic collision phenomena in solids, P417

[2] BAUER LO, 1983, ION IMPLANTATION SEM, V1, P119

[3] DEFECT STUDIES IN CRYSTALS BY MEANS OF CHANNELING [J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 653 - &

[4] Chadderton L. T., 1971, Radiation Effects, V8, P77, DOI 10.1080/00337577108231012

[5] SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3906 - 3911

[6] AMORPHIZATION OF SILICON BY ION-IMPLANTATION - HOMOGENEOUS OR HETEROGENEOUS NUCLEATION [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 30 (04): : 219 - 225

[7] Eisen F. H., 1971, Radiation Effects, V7, P143, DOI 10.1080/00337577108232575

[8] EISEN FH, 1970, P EUROPEAN C ION IMP, P227

[9] ELGHOR MK, IN PRESS J MATER RES

[10] HIRVONEN JK, 1971, P 2 INT C ION IMPL S, P8