NEW MODEL FOR DAMAGE ACCUMULATION IN SI DURING SELF-ION IRRADIATION

[11] Holland O. W., 1985, Radiation Effects, V90, P127, DOI 10.1080/00337578508222524

[12] DAMAGE NUCLEATION AND ANNEALING IN MEV ION-IMPLANTED SI [J]. APPLIED PHYSICS LETTERS, 1988, 53 (14) : 1282 - 1284

[13] NEW ASPECTS OF ENHANCED ION-SCATTERING NEAR 180-DEGREES [J]. PHYSICAL REVIEW B, 1987, 35 (13): : 6495 - 6503

[14] FEATURES OF COLLISION CASCADES IN SILICON AS DETERMINED BY TRANSMISSION ELECTRON-MICROSCOPY [J]. NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR): : 143 - 151

[15] KULIKANSKAS VS, 1968, ZH EKSP TEOR FIZ+, V26, P321

[16] ION IMPLANTATION OF SILICON AND GERMANIUM AT ROOM TEMPERATURE . ANALYSIS BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 663 - &

[17] ATOMIC-STRUCTURE OF COLLISION CASCADES IN ION-IMPLANTED SILICON AND CHANNELING EFFECTS [J]. MATERIALS LETTERS, 1985, 3 (03) : 67 - 72

[18] SOLID-PHASE-EPITAXIAL GROWTH AND FORMATION OF METASTABLE ALLOYS IN ION-IMPLANTED SILICON [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04): : 871 - 887

[19] Olson G. L., 1983, Laser-Solid Interactions and Transient Thermal Processing of Materials, P141

[20] COMPARATIVE-STUDY OF UNIAXIAL CHANNELING-BLOCKING AND SINGLE-ALIGNMENT CHANNELING BACKSCATTERING-REVERSIBILITY AND DEFECT ANALYSIS [J]. PHYSICAL REVIEW B, 1977, 16 (01): : 4 - 9

[11] Holland O. W., 1985, Radiation Effects, V90, P127, DOI 10.1080/00337578508222524

[12] DAMAGE NUCLEATION AND ANNEALING IN MEV ION-IMPLANTED SI [J]. APPLIED PHYSICS LETTERS, 1988, 53 (14) : 1282 - 1284

[13] NEW ASPECTS OF ENHANCED ION-SCATTERING NEAR 180-DEGREES [J]. PHYSICAL REVIEW B, 1987, 35 (13): : 6495 - 6503

[14] FEATURES OF COLLISION CASCADES IN SILICON AS DETERMINED BY TRANSMISSION ELECTRON-MICROSCOPY [J]. NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR): : 143 - 151

[15] KULIKANSKAS VS, 1968, ZH EKSP TEOR FIZ+, V26, P321

[16] ION IMPLANTATION OF SILICON AND GERMANIUM AT ROOM TEMPERATURE . ANALYSIS BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 663 - &

[17] ATOMIC-STRUCTURE OF COLLISION CASCADES IN ION-IMPLANTED SILICON AND CHANNELING EFFECTS [J]. MATERIALS LETTERS, 1985, 3 (03) : 67 - 72

[18] SOLID-PHASE-EPITAXIAL GROWTH AND FORMATION OF METASTABLE ALLOYS IN ION-IMPLANTED SILICON [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04): : 871 - 887

[19] Olson G. L., 1983, Laser-Solid Interactions and Transient Thermal Processing of Materials, P141

[20] COMPARATIVE-STUDY OF UNIAXIAL CHANNELING-BLOCKING AND SINGLE-ALIGNMENT CHANNELING BACKSCATTERING-REVERSIBILITY AND DEFECT ANALYSIS [J]. PHYSICAL REVIEW B, 1977, 16 (01): : 4 - 9