DAMAGE NUCLEATION AND ANNEALING IN MEV ION-IMPLANTED SI

[1] ON THE NATURE OF RADIATION DAMAGE IN METALS [J]. JOURNAL OF APPLIED PHYSICS, 1954, 25 (08) : 961 - 970

[2] DAMAGE INDUCED THROUGH MEGAVOLT ARSENIC IMPLANTATION INTO SILICON [J]. APPLIED PHYSICS LETTERS, 1982, 41 (06) : 537 - 539

[3] ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J]. CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) : 4053 - &

[4] CRYSTALLINE TO AMORPHOUS TRANSFORMATION IN ION-IMPLANTED SILICON - COMPOSITE MODEL [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (03) : 1119 - 1127

[5] ELLIMAN RG, 1986, NUCL INSTRUM METH B, V15, P439, DOI 10.1016/0168-583X(86)90340-X

[6] MINORITY-CARRIER LIFETIME IN SILICON AFTER AR+ AND SI+ IMPLANTATION [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 52 (02): : 463 - 474

[7] HIGH-ENERGY AU-IMPLANTATION INTO SILICON - RADIATION-DAMAGE AND MICROSCOPIC DISTRIBUTION OF IMPLANTED ATOMS [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 26 (04) : 551 - 556

[8] ION IMPLANTATION OF SILICON AND GERMANIUM AT ROOM TEMPERATURE . ANALYSIS BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 663 - &

[9] CARRIER LIFETIME REDUCTION BY ARGON IMPLANTATION INTO SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (03) : 655 - 660

[10] ATOMIC-STRUCTURE OF ION-IMPLANTATION DAMAGE AND PROCESS OF AMORPHIZATION IN SEMICONDUCTORS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (03): : 1303 - 1308

[1] ON THE NATURE OF RADIATION DAMAGE IN METALS [J]. JOURNAL OF APPLIED PHYSICS, 1954, 25 (08) : 961 - 970

[2] DAMAGE INDUCED THROUGH MEGAVOLT ARSENIC IMPLANTATION INTO SILICON [J]. APPLIED PHYSICS LETTERS, 1982, 41 (06) : 537 - 539

[3] ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J]. CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) : 4053 - &

[4] CRYSTALLINE TO AMORPHOUS TRANSFORMATION IN ION-IMPLANTED SILICON - COMPOSITE MODEL [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (03) : 1119 - 1127

[5] ELLIMAN RG, 1986, NUCL INSTRUM METH B, V15, P439, DOI 10.1016/0168-583X(86)90340-X

[6] MINORITY-CARRIER LIFETIME IN SILICON AFTER AR+ AND SI+ IMPLANTATION [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 52 (02): : 463 - 474

[7] HIGH-ENERGY AU-IMPLANTATION INTO SILICON - RADIATION-DAMAGE AND MICROSCOPIC DISTRIBUTION OF IMPLANTED ATOMS [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 26 (04) : 551 - 556

[8] ION IMPLANTATION OF SILICON AND GERMANIUM AT ROOM TEMPERATURE . ANALYSIS BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 663 - &

[9] CARRIER LIFETIME REDUCTION BY ARGON IMPLANTATION INTO SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (03) : 655 - 660

[10] ATOMIC-STRUCTURE OF ION-IMPLANTATION DAMAGE AND PROCESS OF AMORPHIZATION IN SEMICONDUCTORS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (03): : 1303 - 1308