HIGH-ENERGY AU-IMPLANTATION INTO SILICON - RADIATION-DAMAGE AND MICROSCOPIC DISTRIBUTION OF IMPLANTED ATOMS

被引：26

作者：

LINDNER, JKN

HECKING, N

KAAT, ET

机构：

来源：

关键词：

D O I：

10.1016/0168-583X(87)90541-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：551 / 556

页数：6

共 18 条

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[9] COMPLEX-REFRACTIVE-INDEX PROFILES OF 4-MEV GE ION-IRRADIATION DAMAGE IN SILICON
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