CARRIER LIFETIME REDUCTION BY ARGON IMPLANTATION INTO SILICON

[1] ANDERSEN HH, 1974, PHYSICS IONIZED GASE

[2] OXYGEN PRECIPITATION EFFECTS ON SI-N+-P JUNCTION LEAKAGE BEHAVIOR [J]. APPLIED PHYSICS LETTERS, 1982, 40 (07) : 581 - 583

[3] ENERGY-LEVELS IN SILICON [J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1980, 10 : 157 - 228

[4] EXACT MODELING OF TRANSIENT-RESPONSE OF AN MOS CAPACITOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (03) : 90 - 101

[5] OBSERVATION OF IMPURITY REDUSTRIBUTION DURING THERMAL OXIDATION OF SILICON USING MOS STRUCTURE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (03) : 308 - &

[6] SURFACE RECOMBINATION IN SEMICONDUCTORS [J]. SURFACE SCIENCE, 1968, 9 (02) : 347 - +

[7] Ghandhi SK, 1977, SEMICONDUCTOR POWER

[8] ON DETERMINATION OF MINORITY CARRIER LIFETIME FROM TRANSIENT RESPONSE OF AN MOS CAPACITOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) : 781 - +

[9] MINORITY-CARRIER LIFETIME IN SILICON AFTER AR+ AND SI+ IMPLANTATION [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 52 (02): : 463 - 474

[10] COMPARISON OF AR-ION, O-ION, AND CL-ION IMPLANT-DAMAGE GETTERING OF GOLD FROM SILICON USING METAL-OXIDE SILICON TECHNIQUES [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) : 6168 - 6173

[1] ANDERSEN HH, 1974, PHYSICS IONIZED GASE

[2] OXYGEN PRECIPITATION EFFECTS ON SI-N+-P JUNCTION LEAKAGE BEHAVIOR [J]. APPLIED PHYSICS LETTERS, 1982, 40 (07) : 581 - 583

[3] ENERGY-LEVELS IN SILICON [J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1980, 10 : 157 - 228

[4] EXACT MODELING OF TRANSIENT-RESPONSE OF AN MOS CAPACITOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (03) : 90 - 101

[5] OBSERVATION OF IMPURITY REDUSTRIBUTION DURING THERMAL OXIDATION OF SILICON USING MOS STRUCTURE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (03) : 308 - &

[6] SURFACE RECOMBINATION IN SEMICONDUCTORS [J]. SURFACE SCIENCE, 1968, 9 (02) : 347 - +

[7] Ghandhi SK, 1977, SEMICONDUCTOR POWER

[8] ON DETERMINATION OF MINORITY CARRIER LIFETIME FROM TRANSIENT RESPONSE OF AN MOS CAPACITOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) : 781 - +

[9] MINORITY-CARRIER LIFETIME IN SILICON AFTER AR+ AND SI+ IMPLANTATION [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 52 (02): : 463 - 474

[10] COMPARISON OF AR-ION, O-ION, AND CL-ION IMPLANT-DAMAGE GETTERING OF GOLD FROM SILICON USING METAL-OXIDE SILICON TECHNIQUES [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) : 6168 - 6173