EXACT MODELING OF TRANSIENT-RESPONSE OF AN MOS CAPACITOR

被引：44

作者：

COLLINS, TW

CHURCHILL, JN

机构：

[1] IBM CORP, GEN PROD DIV, DEV LAB, SAN JOSE, CA 95193 USA

[2] UNIV CALIF, DEPT ELECT ENGN, DAVIS, CA USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1975年 / ED22卷 / 03期

关键词：

D O I：

10.1109/T-ED.1975.18086

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：90 / 101

页数：12

共 10 条

[1]

COLLINS TW, 1973, THESIS U CALIFORNIA

[2] ON DETERMINATION OF MINORITY CARRIER LIFETIME FROM TRANSIENT RESPONSE OF AN MOS CAPACITOR [J].

HEIMAN, FP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) :781-+

[3] MINORITY CARRIER LIFETIME DETERMINATION FROM INVERSION LAYER TRANSIENT RESPONSE [J].

HOFSTEIN, SR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) :785-+

[4]

MOLL J, 1964, PHYSICS SEMICONDUCTO, pCH6

[5] TRANSIENT RESPONSES OF A PULSED MIS-CAPACITOR [J].

MULLER, J ;

SCHIEK, B .

SOLID-STATE ELECTRONICS, 1970, 13 (10) :1319-&

[6] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J].

SAH, CT ;

NOYCE, RN ;

SHOCKLEY, W .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09) :1228-1243

[7] CURRENT AND CAPACITANCE TRANSIENT RESPONSES OF MOS CAPACITOR .2. RECOMBINATION CENTERS IN SURFACE SPACE-CHARGE LAYER [J].

SAH, CT ;

FU, HS .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 14 (01) :59-70

[8] CURRENT AND CAPACITANCE TRANSIENT RESPONSES OF MOS CAPACITOR .1. GENERAL THEORY AND APPLICATIONS TO INITIALLY DEPLETED SURFACE WITHOUT SURFACE STATE [J].

SAH, CT ;

FU, HS .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 11 (01) :297-+

[9]

SHOCKLEY W, 1950, ELECTRONS HOLES SEMI, P467

[10]

ZERBST M, 1966, Z ANGEW PHYSIK, V22, P30

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